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| BDP 951 NPN Silicon AF Power Transistors * For AF drivers and output stages * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary type: BDP952...BDP956 (PNP) Type BDP 951 BDP 953 BDP 955 Marking Ordering Code BDP 951 Q62702-D1339 BDP 953 Q62702-D1341 PDP 955 Q62702-D1343 Pin Configuration 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT-223 SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 951 BDP 953 BDP 955 Collector-base voltage BDP 951 BDP 953 BDP 955 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 80 100 120 Unit V VCEO VCBO 100 120 140 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 1 5 3 5 200 500 3 150 - 65 ... + 150 42 17 W C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group Nov-28-1996 BDP 951 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO V 80 100 120 100 20 100 25 40 15 475 V 0.8 1.5 nA A nA - IC = 10 mA, IB = 0 mA, BDP 951 IC = 10 mA, IB = 0 mA, BDP 953 IC = 10 mA, IB = 0 mA, BDP 955 Collector-base breakdown voltage V(BR)CBO IC 100 A, IB = 0 , BDP 951 IC = 100 A, IB = 0 , BDP 953 IC = 100 A, IB = 0 , BDP 955 Base-emitter breakdown voltage 100 120 140 V(BR)EBO 5 IE = 10 A, IC = 0 Collector cutoff current ICBO - VCB = 100 V, IE = 0 , TA = 25 C VCB = 100 V, IE = 0 , TA = 150 C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsat VBEsat - IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency fT 100 25 - MHz pF - IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Nov-28-1996 BDP 951 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f(tp) 3.2 10 3 K/W W TS TA RthJS 10 2 Ptot 2.4 2.0 10 1 1.6 10 0 1.2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0.8 10 -1 0.4 0.0 0 20 40 60 80 100 120 C 150 TA ,TS 10 -2 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Permissible Pulse Load Ptotmax / PtotDC = f(tp) DC current gain hFE = f (IC) VCE = 2V 10 3 10 3 - - Ptotmax/P totDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 hFE 10 2 100C 25C -50C 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 0 10 10 1 10 2 10 3 mA IC Semiconductor Group 3 Nov-28-1996 BDP 951 Collector cutoff current ICBO = f (TA) VCB = 45V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 5 nA 10 4 mA 10 4 ICBO 10 3 max 10 2 IC 10 3 100C 25C -50C 10 2 10 1 typ 10 1 10 0 10 -1 0 20 40 60 80 100 120 C 150 TA 10 0 0.0 0.2 0.4 V 0.8 V CEsat Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector current IC = f (VBE) VCE = 2V 10 4 10 4 mA mA IC 10 3 -50C 25C 100C 10 2 IC 10 3 10 2 -50C 25C 100C 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 V BEsat 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 V BE Semiconductor Group 4 Nov-28-1996 |
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